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Compound Semiconductor Solutions

Advancing the Technology of Compound Semiconductors



Innovation is the core of our business. Dow Corning pioneered the science of silicon-based materials in 1943. Today you can blaze the trails again in the world of microelectronics with silicon carbide (SiC) based solutions that are advancing the technology of compound semiconductors.

What's Behind Our SiC Wafers

You can count on a reliable source of high-quality silicon carbide wafers and epitaxy services, as we put our advanced materials expertise and rigorous manufacturing protocols to your service. But it is what’s behind the wafer that sets us apart, helping our customers compete and win in this rapidly evolving industry.

  • Intelligence - Expertise in scale-up and sustainable high-volume manufacturing
  • Investment - World-class production facility
  • Infrastructure - Business strategies, processes and solutions aligned to the principles of sustainability
  • Integrity - Focused on supply reliability for long-term customer success

Silicon Carbide Products and Services to Meet Your Needs

Dow Corning fabricates wafers using proprietary crystal growth methods and precision wafering processes to meet the performance and consistency required for high yields in semiconductor device manufacturing processes.

Dow Corning offers a variety of silicon carbide product options to suit your specific needs:

4H n+ Conductive SiC Wafers - available in test grades for research, in commercial grade for high-volume production, or in prime where top-end wafer specifications are required.

SiC Epitaxy- Epi-layers (n+ or n-) are available on wafers from Dow Corning or on customer supplied wafers. Specifications can be tuned to customer needs, with thickness up to 20 ums.

For more silicon carbide product solutions or to find out how Dow Corning can help with your compound semiconductor applications, contact us.

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