Innovation is the core of our business. Dow Corning pioneered
the science of silicon-based materials in 1943. Today you can blaze the trails
again in the world of microelectronics with silicon carbide (SiC) based
solutions that are advancing the technology of compound
What's Behind Our SiC Wafers
You can count on a reliable source of high-quality silicon carbide wafers
and epitaxy services, as we put our advanced materials expertise and rigorous
manufacturing protocols to your service. But it is what’s behind the wafer that
sets us apart, helping our customers compete and win in this rapidly evolving
Intelligence - Expertise in scale-up and sustainable high-volume
Investment - World-class production facility
Infrastructure - Business strategies, processes and solutions
aligned to the principles of sustainability
Integrity - Focused on supply reliability for long-term customer
Silicon Carbide Products and Services to Meet Your
Dow Corning fabricates wafers using proprietary crystal
growth methods and precision wafering processes to meet the performance and
consistency required for high yields in semiconductor device manufacturing
Dow Corning offers a variety of silicon carbide product
options to suit your specific needs:
4H n+ Conductive SiC Wafers - available in test
grades for research, in commercial grade for high-volume production, or in
prime where top-end wafer specifications are required.
SiC Epitaxy- Epi-layers (n+ or n-) are
available on wafers from Dow Corning or on customer supplied wafers.
Specifications can be tuned to customer needs, with thickness up to 20 ums.
For more silicon carbide
product solutions or to find out how Dow Corning can help with your
compound semiconductor applications, contact us.