4H Conductive

Dow Corning® brand 4H Conductive SiC Wafers are produced to 3 specifications in test grade for research, in prime grade for high-volume production, or in select grade where unique wafer specifications are required.

Typical 4H n+ SiC Wafer Properties

Specification Writers: Please contact your local Dow Corning sales office or your Global Dow Corning Connection before writing specifications on these products.

	Product Metric		Detail		Typical Value		High Value		Low Value		Units		Reference Information
	Polytype		4H		-		-		-		-		-
	Surface Orientation		Tilted 4 or 8 degrees towards <112-0>		4 or 8		n/a		n/a		degrees		X-ray diffraction at crystal center
	Diameter		-		76.0		76.45		75.95		mm		SEMI™ M55
	Bow		-		6 to -6		12		-12		μm		Capacitance gauge test, 3 mm edge exclusion; see SEMI MF1530-02
	Warp		-		17		30		0		μm		Capacitance gauge test, 3 mm edge exclusion; see SEMI MF1530-02
	Total Thickness Variation		-		<2		10		0		μm		Capacitance gauge test, 3 mm edge exclusion; see SEMI MF1530-02
	Maximum Thickness		-		365		375		325		μm		Capacitance gauge test, 3 mm edge exclusion; see SEMI MF1530-02
	Resistivity		-		0.025		0.028		0.010		ohm-cm		Eddy current test, 37 points, 1x1 cm grid; 6 mm edge exclusion

SEMI is a trademark of Semiconductor Equipment and Materials Institute.

For availability and pricing on 4H n+ SiC Wafers, contact us.