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The unique properties of silicon carbide (SiC) wafers and epitaxy offer the
benefit of faster switching at higher power and increased energy efficiency,
often eliminating expensive cooling systems and enabling improved
performance.
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Potential applications include:
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Hybrid or electric vehicles
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Power control systems
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High-frequency communications systems
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Power factor correction
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Uninterrupted power supplies
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Inverter systems
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And more
Options to Meet Your Needs
Dow Corning offers a variety of product options to suit your specific
needs:
4H n+ Conductive SiC
Wafers - available in test grades for research, in commercial grade
for high-volume production, or in prime where top-end wafer specifications are
required.
Semi-Insulating SiC Wafers - available by special
order for test grades for research, in commercial grade for high-volume
production, or in prime where top-end wafer specifications are required.
SiC Epitaxy-
Epi-layers (n+ or n-) are available on wafers from Dow Corning Compound
Semiconductor Solutions or on customer supplied wafers. Specifications can be
tuned to customer needs, with thickness up to 20 ums.
Product ID
Codes - To assist our customers, each product carries a
product ID codes, with valuable information about polytype, diameter, doping,
orientation, polish, micropipes and grade.
Laser Mark
Format - Employs laser mark methodology similar to that
identified by SEMI.
For more information about any of these products or special needs, including
which product is right for your application, contact
us.
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