Power Electronics Solutions

SiC Wafers and Epitaxy

The unique properties of silicon carbide (SiC) wafers and epitaxy offer the benefit of faster switching at higher power and increased energy efficiency, often eliminating expensive cooling systems and enabling improved performance.

Potential applications include:

• Hybrid or electric vehicles
• Power control systems
• High-frequency communications systems
• Power factor correction
• Uninterrupted power supplies
• Inverter systems
• And more

Options to Meet Your Needs

Dow Corning offers a variety of product options to suit your specific needs:

4H n+ Conductive SiC Wafers - available in test grades for research, in commercial grade for high-volume production, or in prime where top-end wafer specifications are required.

SiC Epitaxy- Epi-layers (n+ or n-) are available on wafers from Dow Corning or on customer supplied wafers. Specifications can be tuned to customer needs, with thickness up to 20 ums.

Product ID Codes - To assist our customers, each product carries a product ID codes, with valuable information about polytype, diameter, doping, orientation, polish, micropipes and grade.

Laser Mark Format - Employs laser mark methodology similar to that identified by SEMI.

For more information about any of these products or special needs, including which product is right for your application, contact us.