SiC Epitaxy

SiC CVD Epitaxy Product Options

SiC Epitaxy is an option specification which can be added to the Dow Corning® brand 4H SiC Wafer product or on customer supplied wafers.
Dopant types include nitrogen or aluminum.

	Product Metric		Detail		High Value		Low Value		Units		Information and Footnotes
	Total Epilayer Deposited Thickness Rangea		Target thickness offered		20		0		μm		-
	Total of all Epilayers Thickness Uniformity		-		10		0		%		Optical Test, percent difference between maximum and minimum value, 3 mm edge exclusion
	Epilayer Net Dopingb Uniformity		-		40		0		%		C-V test on monitor wafer; percent difference between maximum and minimum value, 5 mm edge exclusive
	Doping Rangeb		-		1E17		5E15		cm3		-

^aIndividual layer thickness not measured when magnitude of net doping N_d>1E17/cm³.
^bTest valid for net doping value magnitude 1E14<N_d<1E17/cm³. Individual part doping not tested for values > 1E17/cm³.