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Compound Semiconductor Solutions

Dow Corning Compound Semiconductor Solutions has either authored or co-authored the following technical articles.  Should you require a copy of the complete article, please contact the publication directly as copyrights belong to the specific publications.

 

DateTitlePublication

Nov-07

"Evaluation of Test Methods for Characterizing Semi-Insulating SiC Wafers"

Submitted to CS MANTECH Conference – April 2008 Chicago, IL

Oct-07

"A Modeling Study on Sensitivity of PVT Growth of Bulk SiC Crystals to Graphite Crucible Thermal Conductivity and RF Induction Coil Position"

Proceedings of the International Conference on Silicon Carbide and Related Materials – 2007, Otsu, Japan, October 14-19, 2007

Oct-07

"Infrared PL Signatures of N-Type Bulk SiC Substrates with Nitrogen Impurity Concentrations between 1016 and 1017 cm-3"

Proceedings of the International Conference on Silicon Carbide and Related Materials – 2007, Otsu, Japan, October 14-19, 2007

Oct-07

"Sense Determination of Micropipes via Grazing-Incidence Synchrotron White Beam X-ray Topography in 4H Silicon Carbide"

Proceedings of the International Conference on Silicon Carbide and Related Materials – 2007, Otsu, Japan, October 14-19, 2007

Oct-07

"Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers"

Proceedings of the International Conference on Silicon Carbide and Related Materials – 2007, Otsu, Japan, October 14-19, 2007

Oct-07

"The Origin of Basal Plane Bending in PVT-Grown SiC Boules"

Proceedings of the International Conference on Silicon Carbide and Related Materials – 2007, Otsu, Japan, October 14-19, 2007

Oct-07

"Micropipe Dissociation Through Thick n+ Buffer Layer Growth"

Proceedings of the International Conference on Silicon Carbide and Related Materials – 2007, Otsu, Japan, October 14-19, 2007

Aug-07

"Sense Determination of Micropipes via Grazing-Incidence Synchrotron White Beam X-ray Topography in 4H Silicon Carbide"

 Approved for publication in Applied Physics Letters

Jul-07

“A “Probe-Lift” MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction."

Submitted for inclusion in the IEEE Journal of Electron Devices

Jul-07

"Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses"

Submitted for inclusion in the Journal of Electronic Materials

Jan-07

"Carrier Lifetime Analysis by Microwave Photoconductive Decay (u-PCD) for 4H SiC Epitaxial Wafers."

Mat. Sci. For. 556-557 (2007) p 323

Jan-07

"Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System"

Mat. Sci. For. 556-557 (2007) p 145

Jan-07

"Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates"

Mat. Sci. For. 556-557 (2007) p 69

Sep-06

"Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor"

Mat. Sci. For. 527-529 (2006) p 175

Sep-06

"Non-Equilibrium Carrier Diffusion and Recombination in Semi-insulating PVT Grown Bulk 6H-SiC Crystals"

Mat. Sci. For. 527-529 (2006) p 469

Sep-06

"A New Method of Mapping and Counting Micropipes in SiC Wafers"

Mat. Sci. For. 527-529 (2006) p 447

Sep-06

"Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging"

Mat. Sci. For. 527-529 (2006) p 721

Apr-06

"Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases"

Mater. Res. Soc. Symp. Proc. Vol 911, p.49, 2006

Apr-06

"Cross Polarization Imaging and Micro Raman Detection of Defects in the Epitaxy of 4H SiC"

Journal of Electronic Materials Vol. 34, Nov. 4, 2005

Dec-05

"A Comparative Study of Micropipe Decoration and Counting in Conductive and Semi-Insulating Silicon Carbide Wafers"

Journal of Electronic Materials , Vol. 34, Nov. 10, 2005

Oct-05

"Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals"

Mat. Sci. For. 457-460 (2004) p 51

Oct-05

"Electrical Characterization of Semi-insulating 6H-SiC Substrates"

Mat. Sci. For. 457-460 (2004) p 669

May-05

"Nonuniformities of Electrical Resistivity in Undoped 6H SiC Wafers"

Journal of Applied Physics 97, 113705 s200d


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