Chemical Vapor Deposition

Chemical Vapor Deposition Precursors

The Process

Chemical vapor deposition, or CVD, is a deposition process that uses one or more gas or liquid precursor materials (in our case, a precursor would be a silicon source) that are carried by an inert gas stream into a deposition chamber containing the wafers. The precursors react (often by using additional energy from heat or plasma) and attach themselves to the wafer surface, gradually building a layer of the desired composition. Any byproducts are then swept away in the gas stream. This continues until the desired thickness of the new thin film has been achieved.

Challenges

In an industry that continues to evolve and develop new integrated circuits, there are many challenges to overcome. With issues such as high aspect ratios, low thermal budgets, and critical electrical and mechanical property requirements to address, finding the right silicon-based CVD precursor solutions for your devices is critical.

Solutions

Dow Corning is committed to helping you solve your most difficult challenges by continuing to develop and commercialize new molecules for all of your next-generation, thin-film deposition needs. We provide synthesis, purification and testing of silicon-based precursor materials for use in next-generation low-к, high-к, gap fill and low-temperature CVD applications. Dow Corning partners in technology development to service industry needs.

	If you need a material:		Consider products:
	Capable of filling gaps with high aspect ratios		With high vapor pressures
	Capable of depositing thin films with lower process temperatures		That are highly reactive
	For producing silicon nitride thin films		That react with ammonia or nitrogen
			Or with molecules with Si-N bonds that stay intact during processing
	For low dielectric constant		Containing Si-O-C bonds

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