Chemical Vapor Deposition

Low-к and Copper Barrier Applications

	Dow Corning® Brand Product		Description		Features
	Z3MS™ CVD Precursor		A silicon source specialty gas engineered for PECVD processes used to deposit thin-film dielectrics		Multifunctional CVD precursor, compatible with standard PECVD equipment, compatible with standard gas delivery systems, nonpyrophoric, environmentally friendly, not a global warmer; no ozone-depleting byproducts resulting from trimethylsilane decomposition, low cost of ownership
	Z4MS™ CVD Precursor		A silicon source specialty liquid engineered for PECVD processes used to deposit thin-film dielectrics		Multifunctional CVD precursor, compatible with standard PECVD equipment, compatible with standard liquid delivery systems, nonpyrophoric
	ZTOMCATS™ CVD Precursor		A silicon source specialty liquid engineered for PECVD processes used to deposit thin-film dielectrics		Compatible with standard PECVD equipment and standard liquid delivery systems; nonpyrophoric
	Z2DM™ CVD Precursor		A silicon source specialty liquid engineered for PECVD processes used to deposit thin-film dielectrics		Compatible with standard PECVD equipment and standard liquid delivery systems; nonpyrophoric
	Z-OMCATS CVD Precursor		A silicon source specialty liquid engineered for PECVD processes used to deposit thin-film dielectrics		Compatible with standard PECVD equipment and standard liquid delivery systems; nonpyrophoric
	Organosilanes and Organosiloxanes		Silicon source specialty materials engineered for PECVD processes used to deposit thin-film dielectrics		Compatible with standard PECVD equipment and standard liquid delivery systems; nonpyrophoric

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Technical Data

Download Chemical Vapor Deposition Family Data Sheet (PDF size = 355 KB)

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