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Silicon Dioxide
This is the primary composition of layers for dielectric insulation.
Silicon Carbide and Silicon Oxycarbide
Additional carbon content in the layers leads to lower ĸ values. This can
result in faster and purer electronic signal transmission. This is especially
important as devices become more complex and signals have to travel farther as
they are processed. And with conduction lines closer, there is less crosstalk
effect on signals in adjacent lines.
Silicon Nitride
One benefit of nitrogen content in insulation layers is density. This is due
to a closer atomic packing in the layers. Additionally, it’s a good barrier to
moisture and mobile ions (e.g., Na). This is especially useful in top
passivation layers preventing ionic contamination, which can change workings of
devices.
Another effect of nitrogen is higher ĸ values. Silicon nitride has a
dielectric constant of 7.0. This is useful in storing capacitive charges
between transistor gates.
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